MTB9D0P03H8 Datasheet, PDF (2/11 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C050H8
Issued Date : 2017.04.05
Revised Date : 2017.04.10
Page No. : 2/11
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=-10V (Note1)
Continuous Drain Current @ TC=100°C, VGS=-10V (Note1)
Continuous Drain Current @ TA=25°C, VGS=-10V (Note2)
Continuous Drain Current @ TA=70°C, VGS=-10V (Note2)
Pulsed Drain Current
(Note3)
Avalanche Current@L=0.1mH
(Note4)
Avalanche Energy @ L=1mH, ID=-16A, VDD=-15V (Note4)
TC=25℃
(Note1)
Total Power Dissipation
TC=100℃
TA=25°C
(Note1)
(Note2)
TA=70°C
(Note2)
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDSM
IDM
IAS
EAS
PD
PDSM
Tj, Tstg
10s Steady State Unit
-30
V
±20
-59
-37.3
-19.5 -11.6
A
-15.6
-9.3
-210
-34
128
mJ
60
24
W
6.5
2.3
4.5
1.6
-55~+150
°C
Thermal Data
Parameter
Symbol Typical Maximum Unit
Thermal Resistance, Junction-to-case
Rth,j-c
2.2
2.5
Thermal Resistance, Junction-to-ambient ^t≤10s
(Note2) _{Steady State}
Rth,j-a
18
50
23
°C/W
65
Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment
with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
3. Pulse width limited by junction temperature TJ(MAX)=150°C.
4. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 100% tested by conditions of
L=0.1mH, IAS=-10A, VGS=-10V, VDD=-15V.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit Test Conditions
Static
BVDSS
-30
VGS(th)
-1
GFS *1
-
IGSS
-
-
-
-
-2.5
14.7
-
-
±100
V
VGS=0V, ID=-250μA
VDS = VGS, ID=-250μA
S
VDS =-10V, ID=-5A
nA
VGS=±20V, VDS=0V
IDSS
-
-
RDS(ON) *1
-
-
-
-
-1
-10
μA
VDS =-24V, VGS =0V
VDS =-24V, VGS =0, Tj=70°C
7.3
10
mΩ ^{VGS =-10V, ID=-20A}
12
17
VGS =-4.5V, ID=-12A
MTB9D0P03H8
CYStek Product Specification