MTB9D0P03H8 Datasheet, PDF (5/11 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C050H8
Issued Date : 2017.04.05
Revised Date : 2017.04.10
Page No. : 5/11
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Threshold Voltage vs Junction Tempearture
1.4
Ciss
1000
C _oss
Crss
100
0
5
10
15
20
25
30
-VDS, Drain-Source Voltage(V)
1.2
ID=-1mA
1
0.8
0.6
ID=-250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Maximum Safe Operating Area
1000
100
RDS(ON)
Limited
10
1
0.1
TA=25°C, Tj=150°C, VGS=-10V
RθJA=23°C/W, Single Pulse
0.01
0.01
0.1
1
10
-ID, Drain-Source Voltage(V)
100μs
1ms
10ms
100ms
1s
DC
100
Maximum Drain Current vs Junction Temperature
25
Gate Charge Characteristics
10
VDS=-15V
8
6
4
VDS=-20V
2
ID=-12A
0
0 6 12 18 24 30 36 42 48 54 60
Qg, Total Gate Charge(nC)
Forward Transfer Admittance vs Drain Current
100
20
15
10
5 ^{TA=25°C, Tj=150°C, VGS=-10V}
RθJA=23°C/W
0
25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
10
1
0.1
0.01
0.001
VDS=-10V
Pulsed
TA=25°C
0.01
0.1
1
10
100
-ID, Drain Current(A)
MTB9D0P03H8
CYStek Product Specification