MTB60N06L3 Datasheet, PDF (6/9 Pages) Cystech Electonics Corp. – N -Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C708L3
Issued Date : 2009.05.26
Revised Date : 2013.10.30
Page No. : 6/8
Typical Characteristics(Cont.)
Typical Transfer Characteristics
40
35
VDS=5V
30
25
20
15
10
5
0
0
2
4
6
8
10
12
VGS, Gate-Source Voltage(V)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
50
40
TJ(MAX)=150°C
TA=25°C
θ_JA=45°C/W
30
20
10
0
0.0001 0.001
0.01 0.1
1
Pulse Width(s)
10 100
1
D=0.5
Transient Thermal Response Curves
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
t1, Square Wave Pulse Duration(s)
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=120°C/W
1
10
MTB60N06L3
Preliminary
CYStek Product Specification