MTB60N06L3 Datasheet, PDF (3/9 Pages) Cystech Electonics Corp. – N -Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C708L3
Issued Date : 2009.05.26
Revised Date : 2013.10.30
Page No. : 3/8
Source-Drain Diode
IS *1
ISM *3
-
-
2.3
A
-
-
9.2
VSD *1
-
-
1.3
V
trr
-
25
-
ns
Qrr
-
45
-
nC
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
IF=IS, VGS=0V
IF=5A, dIF/dt=100A/μs
Recommended soldering footprint
MTB60N06L3
Preliminary
CYStek Product Specification