MTB60N06L3 Datasheet, PDF (4/9 Pages) Cystech Electonics Corp. – N -Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Typical Characteristics
Spec. No. : C708L3
Issued Date : 2009.05.26
Revised Date : 2013.10.30
Page No. : 4/8
30
25
20
15
10
5
0
0
Typical Output Characteristics
10V, 9V, 8V, 7V,6V,5V
VGS=4V
VGS=3V
2
4
6
8
VDS, Drain-Source Voltage(V)
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
0.4
-100 -50
0
50 100 150 200
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
10000
1000
VGS=2.5V
VGS=3V
100
VGS=4.5V
VGS=10V
10
0.01
0.1
1
10
100
ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
400
360
320
280
240
200
160
120
ID=5A
80
ID=3A
40
0
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
0.8
Tj=25°C
0.6
Tj=150°C
0.4
0.2
0
2
4
6
8
10
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
2
1.6
VGS=4.5V, ID=3A
1.2
0.8
0.4
-60
VGS=10V, ID=5A
-20 20
60 100 140 180
Tj, Junction Temperature(°C)
MTB60N06L3
Preliminary
CYStek Product Specification