MTB60N06L3 Datasheet, PDF (5/9 Pages) Cystech Electonics Corp. – N -Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C708L3
Issued Date : 2009.05.26
Revised Date : 2013.10.30
Page No. : 5/8
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
1000
Threshold Voltage vs Junction Tempearture
1.4
ID=250μA
1.2
1
100
C _oss
Crss
10
0.1
1
10
100
VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
100
10
0.8
0.6
0.4
-60
-20
20
60
100 140
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=15V
8
VDS=30V
6
VDS=48V
1
0.1
0.01
VDS=5V
Pulsed
Ta=25°C
0.1
1
10
100
ID, Drain Current(A)
Maximum Safe Operating Area
100
RDSON
10 ^Limited
1
TC=25°C, Tj=150°C
0.1
VGS=10V, RθJA=45°C/W
Single Pulse
10μs
100μs
1ms
10ms
100ms
DC
0.01
0.1
1
10
100
VDS, Drain-Source Voltage(V)
4
2
ID=5A
0
0
4
8
12 16 20 24
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
7
6
5
4
3
2
TA=25°C
VGS=10V
1
RθJA=45°C/W
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
MTB60N06L3
Preliminary
CYStek Product Specification