MTB60N06L3 Datasheet, PDF (2/9 Pages) Cystech Electonics Corp. – N -Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=100°C, VGS=10V
Pulsed Drain Current *1
Total Power Dissipation *2
TA=25℃
TA=100℃
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
*2. Surface mounted on a 1 in² pad of 2 oz. copper, t≤10s.
Symbol
VDS
VGS
ID
IDM
Pd
Tj, Tstg
Spec. No. : C708L3
Issued Date : 2009.05.26
Revised Date : 2013.10.30
Page No. : 2/8
Limits
Unit
60
±20
V
5.9
3.7
A
30
2.7
W
1.1
-55~+150
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
14
°C/W
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
45 (Note)
°C/W
Note : Surface mounted on a 1 in² pad of 2 oz. copper, t≤10s; 120°C/W when mounted on minimum copper pad.
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max. Unit Test Conditions
Static
BVDSS
60
VGS(th)
1.0
GFS *1
-
IGSS
-
IDSS
-
-
-
RDS(ON) *1
-
Dynamic
Qg *1, 2
-
Qgs *1, 2
-
Qgd *1, 2
-
td(ON) *1, 2
-
tr *1, 2
-
td(OFF) *1, 2
-
tf *1, 2
-
Ciss
-
Coss
-
Crss
-
Rg
-
-
1.8
9
-
-
-
41
46
22
3.2
7.6
6.4
9
30
6
1128
42
32
2.5
-
3
-
±100
1
25
50
60
-
-
-
-
-
-
-
-
-
-
-
V
V
S
nA
μA
μA
mΩ
mΩ
VGS=0, ID=250μA
VDS =VGS, ID=250μA
VDS =5V, ID=5A
VGS=±20, VDS=0
VDS =60V, VGS =0
VDS =48V, VGS =0, Tj=70°C
VGS =10V, ID=5A
VGS =4.5V, ID=3A
nC ID=5A, VDS=48V, VGS=10V
ns
VDS=30V, ID=5A, VGS=10V,
RG=3.3Ω
pF VGS=0V, VDS=30V, f=1MHz
Ω VGS=15mV, VDS=0, f=1MHz
MTB60N06L3
Preliminary
CYStek Product Specification