MTB30P06KQ8 Datasheet, PDF (6/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C104Q8
Issued Date : 2015.07.27
Revised Date : 2015.07.28
Page No. : 6/9
Typical Characteristics(Cont.)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
300
TJ(MAX)=150°C
250
TA=25°C
θ_JA=40°C/W
200
150
100
50
Typical Transfer Characteristics
28
24
VDS=-10V
20
16
12
8
4
0
0
0.001 0.01
0.1
1
10
100
Pulse Width(s)
0
2
4
6
-VGS, Gate-Source Voltage(V)
Transient Thermal Response Curves
10
1
D=0.5
0.2
0.1 ^0.1
0.05
0.02
0.01 ^0.01
0.001
0.0001
0.001
Single Pulse
0.01
0.1
1
t1, Square Wave Pulse Duration(s)
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=40°C/W
10
100
1000
MTB30P06KQ8
CYStek Product Specification