MTB30P06KQ8 Datasheet, PDF (4/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C104Q8
Issued Date : 2015.07.27
Revised Date : 2015.07.28
Page No. : 4/9
Typical Characteristics
Typical Output Characteristics
28
-10V, -9V,-8V,-7V,-6V,-5V
24
20
16
12
8
4
0
0
-4.5V
-4V
Tj=25°C
-3.5V
VGS=-3V
2
4
6
8
10
-VDS, Drain-Source Voltage(V)
1000
Static Drain-Source On-State resistance vs Drain Current
100
VGS=-3.5V
VGS=-4V
Normalized Brekdown Voltage vs Ambient
Temperature
1.4
1.2
1.0
0.8
ID=-250μA,
VGS=0V
0.6
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Source Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1.0
Tj=25°C
0.8
0.6
Tj=150°C
0.4
VGS=-4.5V
VGS=-10V
10
0.2
0.1
1
10
0
4
8
12
16
20
-ID, Drain Current(A)
-IS, Source Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
500
450
400
ID=-6A
350
300
250
200
150
100
50
0
0
2
4
6
8
10
-VGS, Gate-Source Voltage(V)
Normalized Drain-Source On-State Resistance vs
Junction Tempearture
2.2
2.0
VGS=-10V, ID=-6A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
RDS(ON)@Tj=25°C : 23.6mΩ typ.
0.2
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB30P06KQ8
CYStek Product Specification