MTB30P06KQ8 Datasheet, PDF (3/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C104Q8
Issued Date : 2015.07.27
Revised Date : 2015.07.28
Page No. : 3/9
Electrical Characteristics(Cont.) (Tj=25°C, unless otherwise specified)
Symbol
Qg (Note 1&2)
Qgs (Note 1&2)
Qgd (Note 1&2)
Source-Drain Diode
IS
ISM(Note 3)
VSD(Note 1)
trr
Qrr
Min.
-
-
-
-
-
-
-
-
Typ.
28.6
5.8
8.4
-
-
-0.77
14.5
8
Note : 1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
2.Independent of operating temperature
3.Pulse width limited by maximum junction temperature
Max.
-
-
-
-4
-16
-1.2
-
-
Unit
Test Conditions
nC VDS=-48V, ID=-7A, VGS=-10V
A
V IS=-4A, VGS=0V
ns
nC
IF=-4A, dIF/dt=100A/μs
Recommended Soldering Footprint
MTB30P06KQ8
CYStek Product Specification