MTB30P06KQ8 Datasheet, PDF (2/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current @TA=25 °C
Continuous Drain Current @TA=70 °C
Pulsed Drain Current (Note 1)
Single Pulse Avalanche Current
Single Pulse Avalanche Energy @ L=5mH, IAS=-7A, VDD=-15V
Power Dissipation (Note 2)
TA=25 °C
TA=70 °C
Operating Junction and Storage Temperature Range
Note : 1.Pulse width limited by maximum junction temperature.
2.Surface mounted on 1 in² copper pad of FR-4 board, t≤10s.
Symbol
BVDSS
VGS
ID
IDM
IAS
EAS
PD
Tj ; Tstg
Spec. No. : C104Q8
Issued Date : 2015.07.27
Revised Date : 2015.07.28
Page No. : 2/9
Limits Unit
-60
V
±20
-7
-5.6
A
-28
-7
122.5
mJ
3.1
W
2
-55~+150 °C
Thermal Resistance Ratings
Thermal Resistance
Symbol
Maximum
Junction-to-Case
R_θJC
5
Junction-to-Ambient (Note)
R_θJA
40
Note : When mounted on a 1 in² pad of 2 oz copper, t≤10s; 125°C/W when mounted on minimum copper pad.
Unit
°C / W
Electrical Characteristics (Tc=25°C, unless otherwise noted)
Symbol
Min. Typ. Max. Unit
Test Conditions
Static
BVDSS
VGS(th)
-60
-
-
V ^{VGS=0V, ID=-250μA}
-1.2
-
-2.5
VDS=-10V, ID=-1mA
IGSS
-
-
±10
VGS=±16V, VDS=0V
IDSS
-
-
-1
μA VDS=-60V, VGS=0V
-
-
-25
VDS=-48V, VGS=0V, Tj=85°C
-
23.5 30.5
ID=-6A, VGS=-10V
RDS(ON) (Note 1)
-
37.5 48.8 mΩ ID=-4A, VGS=-4.5V
-
44.3 58.0
ID=-3A, VGS=-4V
GFS
(Note 1)
-
14
-
S VDS=-5V, ID=-6A
Dynamic
Ciss
-
1453
-
Coss
-
218
-
pF VDS=-20V, VGS=0V, f=1MHz
Crss
-
120
-
td(ON) (Note 1&2)
-
14
-
tr (Note 1&2)
-
td(OFF) (Note 1&2)
-
18.8
68.2
-
-
ns
VDS=-30V, ID=-1A, VGS=-10V,
RG=6Ω
tf (Note 1&2)
-
66.2
-
MTB30P06KQ8
CYStek Product Specification