MTB30P06KQ8 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C104Q8
Issued Date : 2015.07.27
Revised Date : 2015.07.28
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTB30P06KQ8
BVDSS
ID@VGS=-10V, TA=25°C
RDSON@VGS=-10V, ID=-6A
RDSON@VGS=-4.5V, ID=-4A
RDSON@VGS=-4V, ID=-3A
-60V
-7A
23.5mΩ(typ)
37.5mΩ(typ)
44.3mΩ(typ)
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• ESD protected gate
• Pb-free and Halogen-free package
Equivalent Circuit
MTB30P06KQ8
Outline
SOP-8
G：Gate S：Source D：Drain
Ordering Information
Device
MTB30P06KQ8-0-T3-G
Package
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB30P06KQ8
CYStek Product Specification