MTB30P06KQ8 Datasheet, PDF (5/9 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C104Q8
Issued Date : 2015.07.27
Revised Date : 2015.07.28
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
1000
C _oss
100
Crss
10
0.1
1
10
100
-VDS, Drain-Source Voltage(V)
Normalized Threshold Voltage vs Junction
Tempearture
1.6
1.4
1.2
1.0
ID=-1mA
0.8
0.6
ID=-250μA
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
100
Gate Charge Characteristics
10
10
1
0.1
0.01
0.001
VDS=-5V
Pulsed
TA=25°C
0.01
0.1
1
10
-ID, Drain Current(A)
Maximum Safe Operating Area
100
100μs
10
1ms
10ms
1
100ms
1s
0.1
TA=25°C, Tj=150°C, VGS=-10V
DC
RθJA=40°C/W, Single Pulse
0.01
0.1
1
10
100
-VDS, Drain-Source Voltage(V)
1000
8
VDS=-30V
6
VDS=-15V
4
VDS=-48V
2
ID=-7A
0
0 4 8 12 16 20 24 28 32
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
TA=25°C, VGS=-10V, RθJA=40°C/W
0.0
25
50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB30P06KQ8
CYStek Product Specification