BCM20713A1KUFBXG Datasheet, PDF (43/65 Pages) Cypress Semiconductor – Single-Chip Bluetooth Transceiver and Baseband Processor

BCM20713 Preliminary Data Sheet
Electrostatic Discharge Specifications
Note: By default, the drive strength settings specified in Table 14 are for 3.3V. To achieve the required
drive strength for a VDDIO of 2.5V or 1.8V, contact a Broadcom technical support representative (see
“Technical Support” on page 8 for contact information).
Table 14: Digital I/O Characteristics
Characteristics
Input low voltage (VDDO = 3.3V)
Input high voltage (VDDO = 3.3V)
Input low voltage (VDDO = 1.8V)
Input high voltage (VDDO = 1.8V)
Output low voltage
Output high voltage
Input low current
Input high current
Output low current (VDDO = 3.3V, V_OL = 0.4V)
Output high current (VDDO = 3.3V, V_OH = 2.9V)
Output low current (VDDO = 1.8V, V_OL = 0.4V)
Output high current (VDDO = 1.8V, V_OH = 1.4V)
Input capacitance
Symbol
V_IL
V_IH
V_IL
V_IH
V_OL
V_OH
I_IL
I_IH
I_OL
I_OH
I_OL
I_OH
C_IN
Minimum
–
2.0
–
1.1
–
VDDO – 0.4V
–
–
–
–
–
–
–
Typical
–
–
–
–
–
–
–
–
–
–
–
–
–
Maximum Unit
0.8
V
–
V
0.6
V
–
V
0.4
V
–
V
1.0
A
1.0
A
3.0
mA
3.0
mA
3.0
mA
3.0
mA
0.4
pF
Electrostatic Discharge Specifications
Extreme caution must be exercised to prevent electrostatic discharge (ESD) damage. Proper use of wrist and
heel grounding straps to discharge static electricity is required when handling these devices. Always store
unused material in its antistatic packaging.
Types
Human body
model
Machine model
Charged device
model
Table 15: ESD Specifications
Symbol
ESD_HAND_HBM
ESD_HAND_MM
ESD_HAND_CDM
Conditions
ESD Rating
Units
Human body model contact
3.5
kV
discharge per AEC-Q100-002
Machine model contact discharge 150
V
per AEC-Q100-003
Charged device model contact 500
V
discharge per AEC-Q100-011 (750V on corner pins)
Broadcom^®
December 21, 2015 • 20713-DS102-R
Single-Chip Bluetooth Transceiver and Baseband Processor
Page 42
BROADCOM CONFIDENTIAL