BCM20713A1KUFBXG Datasheet, PDF (42/65 Pages) Cypress Semiconductor – Single-Chip Bluetooth Transceiver and Baseband Processor

BCM20713 Preliminary Data Sheet
Electrical Characteristics
Table 11: Power Supply
Parameter
DC supply voltage for RF
DC supply noise for RF, from 100 kHz to
1 MHz
DC supply voltage for core
DC supply voltage for I/O
DC supply
Symbol
VDD_RF ^a
VDD_RF ^b
VDDC
VDDO
VDDTF ^c
Minimum
1.159
–
Typical
1.22
–
1.159
1.22
1.7
–
1.12
–
Maximum
1.281
150
Unit
V
V rms
1.281
V
3.6
V
3.3
V
a. VDD_RF collectively refers to the VDDIF, VDDLNA, VDDPX, VDDLNA, VDDRF RF power supplies.
b. Overall performance defined using integrated regulation.
c. VDDTF for Class 2 must be connected to VREG (main LDO output). VDDTF for Class 1 must be connected
to VREGHV (HV LDO output) or an external voltage source. Refer to the Broadcom compatibility guide for
configuration details. VDDTF requires a capacitor to ground. The value of the capacitor must be tuned to
ensure optimal RF RX sensitivity. The typical capacitor value is 10 pF for both packages. The value may
depend on board layout.
Table 12: High-Voltage Regulator (HV LDO) Electrical Specifications
Parameter
Input voltage
Output voltage
Max current load
Load capacitance
Load capacitor ESR
PSRR
Turn-on time (C_load = 2.2 F)
Dropout voltage
Minimum
2.3
1.8
–
1
0.01
20
–
–
Typical
–
–
–
–
–
–
–
–
Maximum Unit
5.5
V
3.3
V
95
mA
10
F
2
Ω
40
dB
200
s
200
mV
Table 13: Main Regulator (Main LDO) Electrical Specifications
Parameter
Input voltage
Output voltage
Load current
Load capacitance
ESR
Turn-on time
PSRR
Dropout voltage
Minimum
1.63
1.159
–
1
0.1
–
15
–
Typical
–
1.22
–
–
–
–
–
–
Maximum Unit
3.63
V
1.281
V
60
mA
2.2
F
0.5
Ω
300
s
–
dB
200
mV
Broadcom^®
December 21, 2015 • 20713-DS102-R
Single-Chip Bluetooth Transceiver and Baseband Processor
Page 41
BROADCOM CONFIDENTIAL