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CAT28LV65_05 Datasheet, PDF (4/12 Pages) Catalyst Semiconductor – 64K-Bit CMOS PARALLEL EEPROM
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CAT28LV65
D.C. OPERATING CHARACTERISTICS
Vcc = 3.0V to 3.6V, unless otherwise specified.
Symbol
ICC
ISBC(3)
ILI
ILO
VIH(3)
VIL
VOH
VOL
VWI
Parameter
VCC Current (Operating, TTL)
VCC Current (Standby, CMOS)
Input Leakage Current
Output Leakage Current
High Level Input Voltage
Low Level Input Voltage
High Level Output Voltage
Low Level Output Voltage
Write Inhibit Voltage
Limits
Min. Typ.
Max.
8
Units
mA
100
µA
–1
1
µA
–5
5
µA
2
–0.3
2
2
VCC +0.3 V
0.6
V
V
0.3
V
V
Test Conditions
CE = OE = VIL,
f = 1/tRC min, All I/O’s Open
CE = VIHC,
All I/O’s Open
VIN = GND to VCC
VOUT = GND to VCC,
CE = VIH
IOH = –100µA
IOL = 1.0mA
A.C. CHARACTERISTICS, Read Cycle
Vcc = 3.0V to 3.6V, unless otherwise specified.
Symbol
tRC
tCE
tAA
tOE
tLZ(1)
tOLZ(1)
tHZ(1)(2)
tOHZ(1)(2)
tOH(1)
Parameter
Read Cycle Time
CE Access Time
Address Access Time
OEAccess Time
CE Low to Active Output
OE Low to Active Output
CE High to High-Z Output
OE High to High-Z Output
Output Hold from
Address Change
28LV65-15
Min. Max.
150
150
150
70
0
0
50
50
28LV65-20
28LV65-25
Min. Max. Min. Max.
200
250
200
250
200
250
80
100
0
0
0
0
50
55
50
55
Units
ns
ns
ns
ns
ns
ns
ns
ns
0
0
0
ns
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) Output floating (High-Z) is defined as the state when the external data line is no longer driven by the output buffer.
(3) VIHC = VCC –0.3V to VCC +0.3V.
Doc. No. 1024, Rev. D
4
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