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CAT28LV65_05 Datasheet, PDF (1/12 Pages) Catalyst Semiconductor – 64K-Bit CMOS PARALLEL EEPROM
CAT28LV65
64K-Bit CMOS PARALLEL EEPROM
FEATURES
s 3.0V to 3.6V supply
s Read access times:
– 150/200/250ns
s Low power CMOS dissipation:
– Active: 8 mA max.
– Standby: 100 µA max.
s Simple write operation:
– On-chip address and data latches
– Self-timed write cycle with auto-clear
s Fast write cycle time:
– 5ms max.
s Commercial, industrial and automotive
temperature ranges
DESCRIPTION
The CAT28LV65 is a low voltage, low power, CMOS
parallel EEPROM organized as 8K x 8-bits. It requires a
simple interface for in-system programming. On-chip
address and data latches, self-timed write cycle with
auto-clear and VCC power up/down write protection
eliminate additional timing and protection hardware.
DATA Polling, RDY/BUSY and Toggle status bit signal
the start and end of the self-timed write cycle. Additionally,
the CAT28LV65 features hardware and software write
protection.
ALOGEN FR
LEA D F REETM
s CMOS and TTL compatible I/O
s Automatic page write operation:
– 1 to 32 bytes in 5ms
– Page load timer
s End of write detection:
– Toggle bit
– DATA polling
– RDY/BUSY
s Hardware and software write protection
s 100,000 program/erase cycles
s 100 year data retention
The CAT28LV65 is manufactured using Catalyst’s
advanced CMOS floating gate technology. It is designed
to endure 100,000 program/erase cycles and has a data
retention of 100 years. The device is available in JEDEC
approved 28-pin DIP, 28-pin TSOP, 28-pin SOIC or 32-
pin PLCC packages.
BLOCK DIAGRAM
A5–A12
VCC
CE
OE
WE
A0–A4
RDY/BUSY
ADDR. BUFFER
& LATCHES
INADVERTENT
WRITE
PROTECTION
CONTROL
LOGIC
TIMER
ADDR. BUFFER
& LATCHES
ROW
DECODER
HIGH VOLTAGE
GENERATOR
DATA POLLING,
RDY/BUSY &
TOGGLE BIT
COLUMN
DECODER
8,192 x 8
E2PROM
ARRAY
32 BYTE PAGE
REGISTER
I/O BUFFERS
I/O0–I/O7
© 2005 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
1
Doc. No. 1024, Rev. D