AT-32011 Datasheet, PDF (9/10 Pages) Agilent(Hewlett-Packard) – Low Current, High Performance NPN Silicon Bipolar Transistor

AT-32011 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω, V_CE = 5 V, I_C = 20 mA
Freq.       S₁₁
S₂₁
S₁₂      S₂₂
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
0.58
-43
31.28
36.64
151
-38.13
0.012
72
0.83
-21
0.5
0.35
-128
23.51
14.99
103
-29.05
0.035
62
0.42
-40
0.9
0.31
-161
18.93
8.84
87
-25.30
0.054
64
0.33
-40
1.0
0.30
-167
18.06
8.00
84
-24.57
0.059
64
0.32
-40
1.5
0.29
170
14.74
5.46
72
-21.50
0.084
63
0.30
-44
1.8
0.30
158
13.22
4.58
65
-20.06
0.099
61
0.29
-47
2.0
0.30
151
12.35
4.15
61
-19.23
0.109
60
0.29
-50
2.4
0.32
138
10.85
3.49
53
-17.77
0.129
57
0.28
-56
3.0
0.35
121
8.99
2.82
42
-16.03
0.158
52
0.27
-64
4.0
0.41
98
6.64
2.15
25
-13.85
0.203
42
0.25
-80
5.0
0.48
83
4.90
1.76
9
-12.12
0.248
33
0.24
-100
AT-32011 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 5 V, I_C = 20 mA
Freq.
F_min
            ^Γ  op t
R_n
GHz
dB
Mag
Ang
–
0 .5^[1]
0.9
1.8
2.4
1.38
0.18
1.50
0.15
1.78
0.23
1.96
0.34
50
0.20
88
0.16
176
0.13
-156
0.12
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
30
MSG
20
MAG
S21
10
MSG
0
0
1
2
3
4
5
FREQUENCY (GHz)
Figure 25. AT-32011 Gains vs. Frequency at V_ce = 5 V, I_c =
20 mA.
AT-32033 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω, V_CE = 5 V, I_C = 20 mA
AT-32011 fig 25
Freq.       S₁₁
S₂₁
S₁₂      S₂₂
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
0.55
-31
30.00
31.61
138
-37.72
0.013
78
0.81
-16
0.5
0.20
-44
19.91
9.90
95
-25.85
0.051
77
0.56
-19
0.9
0.13
-31
15.15
5.72
82
-21.01
0.089
75
0.53
-22
1.0
0.12
-28
14.30
5.19
79
-20.18
0.098
74
0.53
-23
1.5
0.10
-7
11.03
3.56
68
-16.77
0.145
69
0.52
-30
1.8
0.09
5
9.63
3.03
61
-15.19
0.174
66
0.51
-33
2.0
0.10
13
8.82
2.76
57
-14.33
0.192
64
0.50
-36
2.4
0.11
25
7.49
2.37
50
-12.77
0.230
60
0.49
-42
3.0
0.13
36
5.93
1.98
39
-10.90
0.285
54
0.47
-51
4.0
0.18
42
4.19
1.62
23
-8.50
0.376
43
0.42
-67
5.0
0.22
43
2.98
1.41
8
-6.65
0.465
31
0.37
-86
AT-32033 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 5 V, I_C = 20 mA
Freq.
F_min
            ^{Γ  op t}
R_n
GHz
dB
Mag
Ang
–
30
20
MAG
0 .5^[1]
1.38
0.25
35
0.9
1.50
0.19
85
1.8
1.78
0.21
-150
2.4
1.96
0.39
-114
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.

0.30
0.23
0.14
0.19
10
S21
MSG
0
0
1
2
3
4
5
FREQUENCY (GHz)
Figure 26. AT-32033 Gains vs. Frequency at V_ce = 5
V, I_c = 20 mA.
AT-32011 fig 26