AT-32011 Datasheet, PDF (8/10 Pages) Agilent(Hewlett-Packard) – Low Current, High Performance NPN Silicon Bipolar Transistor

AT-32011 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω, V_CE = 5 V, I_C = 2 mA
Freq.       S₁₁
S₂₁
S₁₂      S₂₂
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
0.95
-13
16.65
6.80
170
-35.84
0.016
82
0.99
-6
0.5
0.81
-57
15.18
5.74
137
-23.56
0.066
58
0.87
-23
0.9
0.68
-93
13.16
4.55
113
-20.72
0.092
43
0.74
-34
1.0
0.64
-100
12.69
4.31
109
-20.42
0.095
40
0.72
-36
1.5
0.55
-133
10.31
3.28
88
-19.49
0.106
32
0.63
-43
1.8
0.51
-150
9.05
2.84
78
-19.29
0.109
29
0.60
-47
2.0
0.49
-161
8.43
2.64
71
-19.22
0.109
28
0.58
-50
2.4
0.47
180
7.06
2.25
60
-19.03
0.112
29
0.55
-55
3.0
0.47
153
5.29
1.84
45
-18.72
0.116
31
0.54
-62
4.0
0.52
118
3.07
1.42
24
-17.19
0.138
37
0.52
-75
5.0
0.59
94
1.17
1.14
6
-14.73
0.183
38
0.51
-92
30
AT-32011 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 2.7 V, I_C = 2 mA
Freq.
F_min
            ^Γ  op t
GHz
dB
Mag
Ang
0 .5^[1]
0.52
0.73
20
0.9
0.75
0.63
49
1.8
1.26
0.44
111
2.4
1.60
0.45
153
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
R_n
–
0.34
0.28
0.16
0.09
20
MSG
10
S21
MAG
0
0
1
2
3
4
5
FREQUENCY (GHz)
Figure 23. AT-32011 Gains vs. Frequency at V_ce = 5 V,
I_c = 2 mA.
AT-32033 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω, V_CE = 5 V, I_C = 2 mA
AT-32011 fig 23
Freq.       S₁₁
S₂₁
S₁₂      S₂₂
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
0.94
-13
16.56
6.73
167
-35.39
0.017
82
0.99
-5
0.5
0.69
-54
14.34
5.21
128
-23.74
0.065
62
0.85
-21
0.9
0.45
-82
11.62
3.81
102
-20.92
0.090
56
0.73
-28
1.0
0.40
-89
11.03
3.56
98
-20.35
0.096
55
0.72
-30
1.5
0.23
-121
8.33
2.61
77
-18.49
0.119
56
0.66
-35
1.8
0.17
-147
7.04
2.25
68
-17.39
0.135
58
0.65
-37
2.0
0.15
-167
6.36
2.08
62
-16.59
0.148
59
0.63
-40
2.4
0.14
151
5.06
1.79
51
-15.14
0.175
60
0.62
-44
3.0
0.20
109
3.52
1.50
37
-12.92
0.226
59
0.61
-53
4.0
0.31
76
1.66
1.21
19
-9.55
0.333
53
0.59
-70
5.0
0.38
55
0.26
1.03
5
-6.80
0.457
42
0.55
-90
30
AT-32033 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 5 V, I_C = 2 mA
20
Freq.
F_min
            ^Γ  op t
R_n
MSG
GHz
dB
Mag
Ang
–
0 .5^[1]
0.52
0.79
MAG
15
0.42
10
0.9
0.75
0.65
48
0.30
S21
MSG
1.8
1.26
0.33
127
0.11
2.4
1.60
0.39
-166
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.

0.07
0
0
1
2
3
4
5
FREQUENCY (GHz)
Figure 24. AT-32033 Gains vs. Frequency at V_ce = 5 V,
I_c = 2 mA.
AT-32011 fig 24