AT-32011 Datasheet, PDF (2/10 Pages) Agilent(Hewlett-Packard) – Low Current, High Performance NPN Silicon Bipolar Transistor

AT-32011, AT-32033 Absolute Maximum Ratings

Symbol
Parameter
Units
V_EBO
Emitter-Base Voltage
V
V_CBO
Collector-Base Voltage
V
V_CEO
Collector-Emitter Voltage
V
I_C
Collector Current
mA
P_T
Power Dissipation^{[2, 3]}
mW
T_j
Junction Temperature
°C
T_STG
Storage Temperature
°C
Absolute
Maximum^[1]
1.5
11
5.5
32
200
150
-65 to 150
Thermal Resistance^[2]:
θ_jc = 550 °C/W
Notes:
1. Operation of this device above any one
of these parameters may cause permanent
damage.
2. T_{mounting surface} = 25°C.
3. Derate at 1.82 mW/°C for T_C > 40°C.
Electrical Specifications, T_A = 25°C
AT-32011 AT-32033
Symbol   Parameters and Test Conditions
Units Min. Typ. Max. Min. Typ.
NF
Noise Figure
  V_CE = 2.7 V, I_C = 2 mA
f = 0.9 GHz
dB
1.0^[1] 1.3^[1]
1.0^[2]
G_A
Associated Gain
  V_CE = 2.7 V, I_C = 2 mA
f = 0.9 GHz
dB
12.5^[1] 14^[1]
11^[2] 12.5^[2]
h_FE
Forward Current Transfer Ratio
  V_CE = 2.7 V, I_C = 2 mA
–
70
300
70
I_CBO
Collector Cutoff Current
  V_CB = 3 V
µA
0.2
I_EBO
Emitter Cutoff Current
  V_EB = 1 V
µA
1.5
Notes:
1. Test circuit A, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.3 dB;
output loss = 0.3 dB.
2. Test circuit B, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.3 dB;
output loss = 0.3 dB.
Max.
1.3^[2]
300
0.2
1.5
1000 pF
RF IN
V_BB
W = 10 L = 1870
W = 10
CKT A: L = 380
CKT B: L = 380
W = 30
L = 60
TEST CIRCUIT
BOARD MATL = 0.062" FR-4 (ε = 4.8)
V_CC
1000 pF
W = 30
L = 60
W = 10 L = 1870
CKT A: 25 Ω
CKT B: 5 Ω
RF OUT
CKT A: W = 30 L = 50 x 2
CKT B: W = 30 L = 60
W = 10
CKT A: L = 105
CKT B: L = 850
NOT TO SCALE
DIMENSIONS IN MILS
Figure 1. Test Circuit for Noise Figure and Associated Gain.
This circuit is a compromise match between best^An^To^-i³s²e⁰f¹ig¹u^fr^ige,¹best gain, stability, and a practical synthesizable match.