AT-32011 Datasheet, PDF (3/10 Pages) Agilent(Hewlett-Packard) – Low Current, High Performance NPN Silicon Bipolar Transistor

Characterization Information, T_A = 25°C

Symbol Parameters and Test Conditions
Units
P_1dB
Power at 1 dB Gain Compression (opt tuning)
  V_CE = 2.7 V, I_C = 20 mA
G_1dB
Gain at 1 dB Gain Compression (opt tuning)
  V_CE = 2.7 V, I_C = 20 mA
IP₃
Output Third Order Intercept Point (opt tuning)
  V_CE = 2.7 V, I_C = 20 mA
|S₂₁|_E2
Gain in 50 Ω System
  V_CE = 2.7 V, I_C = 2 mA
f = 0.9 GHz
f = 0.9 GHz
f = 0.9 GHz
f = 0.9 GHz
dBm
dB
dBm
dB
AT-32011
Typ.
13
16.5
24
13
AT-32033
Typ.
13
15
24
11.5
2
25
20
1.5
1
1 mA
2 mA
5 mA
0.5
10 mA
20 mA
0
0 0.5
1
1.5
2
2.5
FREQUENCY (GHz)
20
15
10
1 mA
2 mA
5
5 mA
10 mA
20 mA
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
15
10
1 mA
5
2 mA
5 mA
10 mA
20 mA
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 2. AT-32011 and AT-32033 Minimum Noise Fig-
ure vs. Frequency and Current at V_ce = 2.7 V.
AT-32011 fig 2
Figure 3. AT-32011 Associated Gain at Optimum Noise
Match vs. Frequency and Current at V_ce = 2.7 V.
AT-32011 fig 3
Figure 4. AT-32033 Associated Gain at Optimum Noise
Match vs. Frequency and Current at V_ce = 2.7 V.
AT-32011 fig 4
20
20
20
15
10
5
2 mA
0
5 mA
10 mA
20 mA
-5
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
15
10
5
2 mA
5 mA
10 mA
20 mA
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
15
10
5
2 mA
5 mA
10 mA
20 mA
0
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 5. AT-32011 and AT-32033 Power at 1 dB Gain
Compression vs. Frequency and Current at V_ce = 2.7 V.
AT-32011 fig 5
Figure 6. AT-32011 1 dB Compressed Gain vs. Frequen-
cy and Current at V_ce = 2.7 V.
AT-32011 fig 6
Figure 7. AT-32033 1 dB Compressed Gain vs. Frequen-
cy and Current at V_ce = 2.7 V.
AT-32011 fig 7