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AT-32011 Datasheet, PDF (6/10 Pages) Agilent(Hewlett-Packard) – Low Current, High Performance NPN Silicon Bipolar Transistor
AT-32011 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω, VCE = 2.7 V, IC = 2 mA
Freq.       S11
S21
S12      S22
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
0.94
-13
16.67
6.81
170
-35.25
0.017
82
0.99
-6
0.5
0.80
-60
15.10
5.69
136
-23.07
0.070
57
0.86
-24
0.9
0.67
-97
12.97
4.45
112
-20.34
0.096
41
0.73
-35
1.0
0.64
-104
12.48
4.21
107
-20.05
0.099
39
0.70
-37
1.5
0.55
-137
10.04
3.18
86
-19.21
0.110
30
0.61
-45
1.8
0.51
-154
8.77
2.75
76
-19.04
0.112
28
0.58
-49
2.0
0.50
-165
8.13
2.55
70
-18.99
0.112
27
0.56
-52
2.4
0.48
176
6.75
2.18
58
-18.84
0.114
27
0.54
-57
3.0
0.49
150
4.97
1.77
43
-18.52
0.119
30
0.52
-64
4.0
0.54
116
2.73
1.37
22
-16.98
0.142
36
0.50
-77
5.0
0.61
92
0.83
1.10
4
-14.50
0.188
37
0.50
-95
30
AT-32011 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 2.7 V, IC = 2 mA
Freq.
Fmin
            Γ  op t
Rn
GHz
dB
Mag
Ang
–
20
MSG
0.5[1]
0.57
0.69
0.9
0.78
0.60
22
0.30
10
MAG
51
0.25
S21
1.8
1.25
0.42
117
0.14
2.4
1.57
0.44
159
0.08
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
0
0
1
2
3
4
5
FREQUENCY (GHz)
Figure 19. AT-32011 Gains vs. Frequency at Vce = 2.7 V,
Ic = 2 mA.
AT-32033 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω, VCE = 2.7 V, IC = 2 mA AT-32011 fig 19
Freq.       S11
S21
S12      S22
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
0.93
-13
16.61
6.77
167
-34.89
0.018
82
0.99
-6
0.5
0.68
-56
14.29
5.18
127
-23.10
0.070
61
0.83
-22
0.9
0.44
-86
11.48
3.75
101
-20.35
0.096
55
0.71
-30
1.0
0.39
-93
10.88
3.50
96
-19.91
0.101
54
0.70
-31
1.5
0.23
-129
8.16
2.56
76
-17.99
0.126
55
0.64
-36
1.8
0.18
-156
6.89
2.21
66
-16.89
0.143
57
0.62
-39
2.0
0.16
-176
6.19
2.04
60
-16.14
0.156
57
0.61
-42
2.4
0.17
146
4.91
1.76
50
-14.70
0.184
58
0.60
-47
3.0
0.22
108
3.35
1.47
36
-12.51
0.237
57
0.58
-56
4.0
0.32
76
1.51
1.19
18
-9.19
0.347
51
0.55
-73
5.0
0.40
56
0.17
1.02
4
-6.54
0.471
40
0.51
-95
AT-32033 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 2.7 V, IC = 2 mA
Freq.
Fmin
            Γ  op t
GHz
dB
Mag
Ang
0.5[1]
0.57
0.77
15
0.9
0.78
0.63
49
1.8
1.25
0.32
136
2.4
1.57
0.40
-159
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.

30
Rn
–
0.36
0.28
0.10
0.08
20
MSG
MAG
10
S21
MSG
0
0
1
2
3
4
5
FREQUENCY (GHz)
Figure 20. AT-32033 Gains vs. Frequency at Vce = 2.7 V,
Ic = 2 mA.
AT-32011 fig 20