AT-32011 Datasheet, PDF (5/10 Pages) Agilent(Hewlett-Packard) – Low Current, High Performance NPN Silicon Bipolar Transistor

AT-32011 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω, V_CE = 1 V, I_C = 1 mA
Freq.       S₁₁
S₂₁
S₁₂      S₂₂
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
0.97
-11
11.09
3.59
172
-33.55
0.021
83
0.99
-5
0.5
0.88
-52
10.13
3.21
141
-20.85
0.091
59
0.92
-21
0.9
0.78
-86
8.67
2.71
117
-17.62
0.132
41
0.82
-32
1.0
0.75
-94
8.35
2.62
112
-17.27
0.137
37
0.79
-35
1.5
0.67
-127
6.35
2.08
89
-16.30
0.153
23
0.71
-45
1.8
0.63
-144
5.25
1.83
77
-16.28
0.154
16
0.67
-50
2.0
0.61
-155
4.75
1.73
70
-16.42
0.151
13
0.65
-53
2.4
0.59
-175
3.48
1.49
57
-16.86
0.144
9
0.62
-59
3.0
0.59
157
1.77
1.23
40
-17.89
0.128
8
0.61
-68
4.0
0.63
120
-0.39
0.96
18
-18.40
0.120
23
0.59
-84
5.0
0.69
94
-2.39
0.76
0
-15.60
0.166
35
0.59
-104
AT-32011 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 1 V, I_C = 1 mA
Freq.
F_min
            ^Γ  op t
GHz
dB
Mag
Ang
0.5^[1]
0.42
0.79
26
0.9
0.71
0.70
54
1.8
1.37
0.53
119
2.4
1.80
0.55
158
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.
25
R_n
–
0.44
0.35
0.18
0.08
15
MSG
5
S21
MAG
-5
0
1
2
3
4
5
FREQUENCY (GHz)
Figure 17. AT-32011 Gains vs. Frequency at V_ce = 1
V, I_c = 1 mA.
AT-32033 Typical Scattering Parameters, Common Emitter, Zo = 50 Ω, V_CE = 1 V, I_C = 1 mA
AT-32011 fig 17
Freq.       S₁₁
S₂₁
S₁₂      S₂₂
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
0.97
-11
11.09
3.58
170
-32.75
0.023
83
0.99
-5
0.5
0.81
-52
9.88
3.12
134
-20.30
0.097
60
0.90
-22
0.9
0.61
-87
8.07
2.53
107
-17.57
0.132
46
0.78
-33
1.0
0.56
-95
7.65
2.41
101
-17.24
0.137
44
0.76
-35
1.5
0.41
-136
5.43
1.87
77
-16.61
0.148
39
0.68
-42
1.8
0.36
-160
4.30
1.64
66
-16.36
0.152
41
0.65
-46
2.0
0.34
-177
3.74
1.54
59
-16.05
0.158
44
0.63
-49
2.4
0.34
154
2.49
1.33
47
-15.10
0.176
49
0.61
-55
3.0
0.38
119
0.96
1.12
32
-12.77
0.230
55
0.59
-65
4.0
0.46
81
-0.84
0.91
15
-8.68
0.368
50
0.56
-87
5.0
0.51
56
-1.90
0.80
5
-5.68
0.520
37
0.51
-114
AT-32033 Typical Noise Parameters,
Common Emitter, Zo = 50 Ω, 1 V, I_C = 1 mA
Freq.
F_min             Γ  _{op t}
GHz
dB
Mag
Ang
0.5^[1]
0.42
0.87
25
0.9
0.71
0.73
55
1.8
1.37
0.42
143
2.4
1.80
0.50
-162
Note:
1. 0.5 GHz noise parameter values are extrapolated, not measured.

25
R_n
–
0.48
0.34
0.11
0.07
15
MSG
MAG
5
S21
MSG
-5
0
1
2
3
4
5
FREQUENCY (GHz)
Figure 18. AT-32033 Gains vs. Frequency at V_ce = 1 V,
I_c = 1 mA.
AT-32011 fig 18