U3600BM Datasheet, PDF (14/43 Pages) ATMEL Corporation – SINGLE CHIP CORDLESS TELEPHONE IC

Electrical Characteristics (Continued)
T_amb = +25°C, VRF = VAF = RFOVB = 3.6 V, all bits set to “0”, unless otherwise specified. Test circuit, see Figure 7.
Parameters
Test Conditions
Symbol Min.
Typ.
Max.
Unit
Data Comparator ERX1 = DATRX = 1
Hysteresis
50
mV
Threshold voltage
1.5
V
Input impedance
DAIN
100
kW
Output high voltage
DACO, without load
(CMOS-output –> full swing)
3.5
V
Output low voltage
DACO, without load
(CMOS-output –> full swing)
0.1
V
Output impedance
DACO
6
kW
Battery Switch
“Off” threshold
Decrease VBAT until internal switch
between VBAT and VDD becomes high
ohmic (“off”)
2.85
2.95
3.1
V
“On” threshold
Increase VBAT until internal switch
between VBAT and VDD becomes low
ohmic (“on”)
3.1
3.2
3.35
V
Hysteresis
Difference between on and off threshold
250
mV
“Off”-leakage current
10
µA
Switch “On”-resistance
50
W
Battery Management MUXDA = 1
Maximum bat low
DA[6:0] = 127, RBAT = 1
3.7
3.95
4.1
V
Minimum bat low over switch DA[6:0] = 27, RBAT = 1
3.05
3.2
3.35
V
Maximum bat high
DA[6:0] = 127, RBAT = 0
4.75
5.05
5.25
V
Minimum bat high
DA[6:0] = 0, RBAT = 0
3.83
4.1
4.27
V
Adjust step
3.5
7.5
11.5
mV
Maximum - Minimum
852.5 952.5 1052.5
mV
Microphone Amplifier ETX=1
Open loop gain
80
dB
Gain bandwidth product
3
MHz
Input noise voltage,
BW = 300 Hz to 3.4 kHz,
psophometrically weighted
0.8
2
µVrmsp
Compressor ETX = 1; 470 nF from CTC to GND (VSS)
Gain reference level = G.R.L.
(gain = 0 dB)
298
316
340
mVrms
Gain versus input signal level
(“gain tracking”)
VCOIN = 20 dB less than G.R.L.
VCOIN = 40 dB less than G.R.L.
VCOIN = 50 dB less than G.R.L.
VCOIN = 60 dB less than G.R.L
9
10
11
19
20
21
dB
22
25
28
30
Attack time
VCOIN = step 31.6 mV –> 126 mV,
(-30 dBV –> –18 dBV)
measure time after step, when output
voltage has 1.5 times of final value
3.5
ms
14 U3600BM
4516C–CT0–08/02