U3600BM Datasheet, PDF (11/43 Pages) ATMEL Corporation – SINGLE CHIP CORDLESS TELEPHONE IC

U3600BM
Absolute Maximum Ratings
Parameters
Supply voltage
Junction temperature
Ambient temperature
Storage temperature
Power dissipation T_amb = 60°C
Symbol
V_Batt, V_DD
T_j
T_amb
T_stg
P_tot
Value
5.5
+125
–25 to +75
–50 to +125
0.9
Unit
V
°C
°C
°C
W
Thermal Resistance
Parameters
Junction ambient SSO44
Symbol
R_thJA
Value
70
Unit
K/W
Electrical Characteristics
T_amb = +25°C, VRF = VAF = RFOVB = 3.6 V, all bits set to “0”, unless otherwise specified.
Test circuit, see Figure 7. Crystal specifications, see table “Crystal Specifications”.
Parameters
Test Conditions
Symbol Min. Typ. Max.
Unit
Power Supply
Operating voltage range
3.1
3.6
5.2
V
Current Consumption
Operating current in inactive
mode (low voltage)
VRF = VAF = RFOVB = 2.9 V
VDD = 0 V
30
65
85
µA
Operating current in standby
mode
VRF = VAF = RFOVB = 3.6 V
30
100
350
µA
Operating current in RX mode ERXHF = EVCO3 = EOSC = 1
“waiting for RSSI”
7.5
10.4
mA
Operating current in RX mode ERXHF = EVCO3 = EOSC = ERX1
“receiving data”
= ERXO = 1
8.5
11.5
mA
Operating current in
conversation mode: all blocks
enabled
ERXHF = EVCO3 = EOSC = ERX1 = ERXO
= ERX2 = EEA = EVCO2 = ETXO = 1
no load at RFO Pin 3
20
29
mA
Charge Pump of LL1
Charge pump output voltage Output high
2.38
2.5
2.63
V
Precharge voltage at the loop SB127 = 1, SB119 = 0
filter
1.15
1.4
1.65
V
Charge pump output current in VMLF = 1.25 V, output low
speed-up mode
VMLF = 1.25 V, output high
190
-400
400
µA
-190
µA
Charge pump output current VMLF = 1.25 V, output low
4.3
6.2
8
µA
VMLF = 1.25 V, output high
-8
-6.2
-4.3
µA
Charge pump leakage current VMLF = 1.25 V, output tristate
-150
+150
nA
Charge Pump of PLL3
Charge pump output voltage Output high
2.38
2.5
2.63
V
Charge pump output current in VPCLO = 1.25 V, output low
speed-up mode
VPCLO = 1.25 V, output high
220
-420
420
µA
-220
µA
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4516C–CT0–08/02