U3600BM Datasheet, PDF (13/43 Pages) ATMEL Corporation – SINGLE CHIP CORDLESS TELEPHONE IC

U3600BM
Electrical Characteristics (Continued)
T_amb = +25°C, VRF = VAF = RFOVB = 3.6 V, all bits set to “0”, unless otherwise specified.
Test circuit, see Figure 7. Crystal specifications, see table “Crystal Specifications”.
Parameters
Test Conditions
Symbol Min. Typ. Max.
Unit
Release time
VEXIN = step 50 mV –> 25 mV
measure time after step, when output
voltage has 1.5 times of final value
16
ms
Input resistance
9.5
15
kW
Earpiece Amplifier EEA = 1, ERX2 = 1, BEXP = 1; apply input voltage to EXIN; measure differentially at RECO1/2
Minimum gain
GEA[4:0]=0
0
1
2
dB
Medium gain
GEA[4:0]=16
16
17
18
dB
Maximum gain
GEA[4:0]=31
31
32
33
dB
Gain adjust step
0.8
1
1.2
dB
Output voltage swing
Maximum gain; 1 kW load; increase input
voltage until distortion » 5%
4.8
5
Vpp
Input resistance
7.3
12.5
kW
IF Amplifier: RSSI
Input frequency
ERXHF=1
450
kHz
Input resistance
1.6
2.0
2.5
kW
RSSI sensitivity
VIF = 0 µV
1
starting from 0 increase RSSI-level until
mean of sampled signal at DACO is ³ 0.5.
RSSI-level = ION0
RSSI input voltage dynamic
range
RSSI level number of
programmable steps (see
folowing table “RSSI Level
Programming (Typical Values)
RSSI level step size in the
logarithmic region
VIF = 25.4 µV, f = 450 kHz
increase RSSI level again until mean of
sampled signal at DACO is ³ 0.5.
RSSI-level = ION1
RSSI-sensitivity = ION1-ION0
65
dB
127
dB
0.35
0.46
0.6
dB
RSSI Level Programming (Typical Values)
Input Voltage VIF (µV)
0
25.4
42.4
424
4240
42400
RSSI Level (Decimal)
5
8
14
54
97
111
13
4516C–CT0–08/02