AMD29F010B Datasheet, PDF (21/34 Pages) Advanced Micro Devices – 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory

DC CHARACTERISTICS (Continued)
CMOS Compatible
Parameter
Symbol
Parameter Description
Test Description
Min
Typ
Max Unit
I_LI
I_LIT
I_LO
I_CC1
I_CC2
Input Load Current
V_IN = V_SS to V_CC, V_CC = V_CC Max
A9 Input Load Current
V_CC = V_CC Max, A9 = 12.5 V
Output Leakage Current
V_OUT = V_SS to V_CC, V_CC = V_CC Max
V_CC Active Current (Notes 1, 2) CE# = V_IL, OE# = V_IH
V_CC Active Current
(Notes 2, 3, 4)
CE# = V_IL, OE# = V_IH
±1.0
µA
50
µA
±1.0
µA
12
30
mA
30
40
mA
I_CC3 V_CC Standby Current (Note 5) CE# = V_CC ± 0.5 V, OE# = V_IH
V_IL
Input Low Voltage
V_IH
Input High Voltage
V_ID
Voltage for Autoselect and
Sector Protect
V_CC = 5.25 V
1
5
µA
–0.5
0.8
V
0.7 x V_CC
V_CC + 0.3 V
10.5
12.5
V
V_OL
V_OH1
V_OH2
V_LKO
Output Low Voltage
Output High Voltage
Low V_CC Lock-out Voltage
I_OL = 12 mA, V_CC = V_CC Min
I_OH = –2.5 mA, V_CC = V_CC Min
I_OH = –100 µA, V_CC = V_CC Min
0.85 V_CC
V_CC – 0.4
3.2
0.45
V
V
V
4.2
V
Notes:
1. The I_CC current listed is typically less than 2 mA/MHz, with OE# at V_IH.
2. Maximum I_CC specifications are tested with V_CC=V_CCmax.
3. I_CC active while Embedded Program or Embedded Erase Algorithm is in progress.
4. Not 100% tested.
5. I_CC3 = 20 µA max at extended temperatures (> +85°C).
Am29F010B
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