AMD29F010B Datasheet, PDF (20/34 Pages) Advanced Micro Devices – 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory

DC CHARACTERISTICS
TTL/NMOS Compatible
Parameter
Symbol
Parameter Description
Test Description
I_LI
Input Load Current
I_LIT
A9 Input Load Current
I_LO
Output Leakage Current
I_CC1
V_CC Active Read Current
(Notes 1, 2)
V_IN = V_SS to V_CC, V_CC = V_CC Max
V_CC = V_CC Max, A9 = 12.5 V
V_OUT = V_SS to V_CC, V_CC = V_CC Max
CE# = V_IL, OE# = V_IH
I_CC2
V_CC Active Write Current
(Notes 2, 3, 4)
CE# = V_IL, OE# = V_IH
I_CC3
V_CC Standby Current
CE# and OE# = V_IH
V_IL
Input Low Voltage
V_IH
Input High Voltage
V_ID
Voltage for Autoselect and Sector
Protect
V_CC = 5.0 V
V_OL
V_OH
V_LKO
Output Low Voltage
Output High Voltage
Low V_CC Lock-out Voltage
I_OL = 12 mA, V_CC = V_CC Min
I_OH = –2.5 mA, V_CC = V_CC Min
Notes:
1. The I_CC current listed is typically less than 2 mA/MHz, with OE# at V_IH.
2. Maximum I_CC specifications are tested with V_CC=V_CCmax.
3. I_CC active while Embedded Program or Embedded Erase Algorithm is in progress.
4. Not 100% tested.
Min
–0.5
2.0
10.5
2.4
3.2
Typ
Max
Unit
±1.0
µA
50
µA
±1.0
µA
12
30
mA
30
40
mA
0.4
1.0
mA
0.8
V
V_CC + 0.5 V
12.5
V
0.45
V
V
4.2
V
20
Am29F010B