AK2572 Datasheet, PDF (6/50 Pages) Asahi Kasei Microsystems – APC for Burst Mode Applicable Direct Modulation Laser Diode

ASAHI KASEI
[AK2572]
Ⅱ．ABSOLUTE MAXIMUM RATINGS
Item
Power Supply Voltage
Ground Level
Input Voltage
Input Current
Storage Temperature
Symbol
VDD
VSS
VIN
IIN
Tstg
Min.
- 0.3
0.0
VSS－0.3
- 10
- 55
Max.
6.0
0.0
VDD＋0.3
10
130
Unit
V
V
V
mA
℃
Note
AVDD, DVDD, VDDMD, VDDBI
AVSS, DVSS, VSSBI (Base Voltage)
Excluding VDD-pins
Excluding VDD-pins
Ⅲ．RECOMMENDED OPERATING CONDITIONS
Item
Symbol Min.
Typ.
Max. Unit
Note
Operating Ambient Temperature Ta
- 40
+ 85
℃
Power Supply Voltage
VDD
3.0
VSS
0.0
3.3
0.0
3.5
V 3.3V (-9% / +6%)
0.0
V
Base Voltage
< Important Notice > Please pay attention not to keep the condition of VDD≦1.5V which makes that the Power
On Reset function of AK2572 cannot operate correctly, AK2572 supplies the abnormal LD current and the
possibility of damaging LD increases.
Ⅳ．ELECTRICAL CHARACTERISTICS
(1) Current Consumption
Item
Symbol Min.
Typ. Max. Unit
Note
Current Consumption (All VDD-pins) IDD
－
21
26
mA
[*1], [*2]
[*1] It doesn’t include the output current of I-DACs.
[*2] R_DACx＝FFh (x＝1~3), R_DAC1,2_GAIN＝1, R_DAC3_GAIN＝0, PDGAIN＝0dB, PDIN＝1V
(2) EEPROM Characteristics
Item
Min.
Max.
Unit
Condition
EEPROM Write Cycle
1000
－
times
[*]
EEPROM Data Retention Time
10
－
year Junction temperature Tj＝85℃
[*] This parameter is characterized and is not 100% tested.
< Important Notice > The adjusted data in AKM factory are stored in advance at address location (Device
Address＝A6h, Address＝60h) for the offset voltage of the On-chip temperature sensor. If such excessive
temperature stress is to be applied to the AK2572 which exceeds a guaranteed EEPROM data retention
conditions (for 10 years at 85℃), it is important to read the pre-determined data in advance and to re-write the
same data back into EEPROM after an exposure to the excessive temperature environment. Even if the
exposure time is shorter than the retention time, any accelerated temperature stress tests (such as baking) are
performed, it is recommended to read the pre-set data first and to re-write it after the test. Access to unused
address locations is not functionally guaranteed. Please refer to Section 9.4, “EEPROM Configuration”.
(3) Digital Input / Output Pin DC Characteristics
Item
Symbol Min.
High Level Input Voltage VIH
2.0
Low Level Input Voltage VIL
High Level Output Voltage VOH 0.9VDD
Max.
0.8
Low Level Output Voltage VOL
0.4
Input Leakage Current １ IL1
10
Input Leakage Current 2 IL2
350
Unit
Condition
V
V
V
IOH ＝ - 0.2mA
V
IOL＝1mA (SDA-pin, TXFAULT-pin)
IOL＝0.2mA (Excluding SDA, TXFAULT)
μA
Excluding WP-pin
μA
WP-pin
-6-
<MS0290-E-01>
2004/8