AK2572 Datasheet, PDF (36/50 Pages) Asahi Kasei Microsystems – APC for Burst Mode Applicable Direct Modulation Laser Diode

ASAHI KASEI
[AK2572]
9.3 Read / Write Operation
9.3.1 Byte Write
Byte Write operation is shown in Figure 9-2. Select address and then input the data to be written.
Figure 9-2 Byte Write
SDA ^{1 0 1 0}
00
0
0
S
Device
Device R/ A
Address
A
Data
AS
T _{Address-1 Address-2 W} C
(MSB First)
C
(MSB First)
CT
A
K
K
KO
R
P
T
9.3.2 Page Write
Page Write operation is shown in Figure 9-3. Up to 16 bytes of data can be written at one time. In Page Write
operation, the lower 4 bits of the 8 bits address are effective and the upper 4 bits data does not change.
Therefore after writing data at “xxxx 1111”, next address to be written is “xxxx 0000”.
Figure 9-3 Page Write
SDA 1 0 1 0
00
S ^{Device Device} R/ A
T ^{Address-1AddressW} C
A
-2
K
R
T
Address
(MSB First)
0
0
0 ^.... 0
0
A Data (Address) A Data (Address + 1) A
C
C
C
K
K
K
A Data (Address + n) A S
C
CT
K
KO
P
9.3.3 Current Address Read
Current Address Read operation is shown in Figure 9-4. Address location where data is to be read out is “most
recently accessed address + 1”.
Figure 9-4 Current Address Read
SDA 1 0 1 0
10
S
Device
Device R/ A
T _{Address-1 Address-2 W} C
A
K
R
T
Data
(MSB First)
1
NS
OT
AO
CP
K
9.3.4 Random Read
Random Read operation is shown in Figure 9-5. When to execute Random Read operation, assign an address
to be read out by Dummy Write operation, and issue a Read instruction.
Figure 9-5 Random Read
SDA 1 0 1 0
00 _*
S Device
Device R/ ^A
T Address-1 Address-2 W C
A
K
Address
(MSB First)
R
T
Dummy Write
0 1010
10
AS
CT
KA
R
T
Device
Device R/ ^A
Address-1 Address-2 W C
K
Data
(MSB First)
*: Don't care when Write Protect "ON"
1
NS
OT
AO
CP
K
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< MS0290-E-01>
2004/8