ADG636YRU-REEL Datasheet, PDF (8/16 Pages) Analog Devices – 1 pC Charge Injection, 100 pA Leakage, CMOS, ±5 V/+5 V/+3 V Dual SPDT Switch

ADG636
Parameter
POWER REQUIREMENTS
IDD
1 _{Guaranteed by design; not subject to production test.}
+25°C −40°C to +85°C
0.001
−40°C to +125°C
1.0
Unit
μA typ
μA max
Test Conditions/Comments
VDD = 3.3 V
Digital inputs = 0 V or 3.3 V
Digital inputs = 0 V or 3.3 V
Rev. B | Page 8 of 16