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| ADG636YRU-REEL Datasheet, PDF (13/16 Pages) Analog Devices – 1 pC Charge Injection, 100 pA Leakage, CMOS, ±5 V/+5 V/+3 V Dual SPDT Switch | |||
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TEST CIRCUITS
IDS
V1
S
D
VS
RON = V1/IDS
Figure 14. On Resistance
ADG636
IS (OFF)
S
A
VS
ID (OFF)
D
A
VD
Figure 15. Off Leakage
S
NC
ID (ON)
D
A
VD
NC = NO CONNECT
Figure 16. On Leakage
VDD
0.1µF
VSS
0.1µF
VDD
A1
VSS
S1A
VS1A
3V
ADDRESS
DRIVE (VIN) 0V
A0
VS
50â¦
S1B
VS1B
VOUT
50%
50%
90%
90%
2.4V
EN
GND
D1
RL
300â¦
VOUT
CL
35pF
tTRANSITION
tTRANSITION
Figure 17. Transition Time, tTRANSITION
VDD
0.1µF
VSS
0.1µF
VDD
A0
VSS
S1A
3V
ADDRESS
VS
DRIVE (VIN) 0V
A1
S1B
VS
50â¦
VOUT
80%
80%
2.4V
D1
VOUT
EN
RL
CL
GND
300â¦
35pF
tBBM
Figure 18. Break-Before-Make Delay, tBBM
VDD
0.1µF
VSS
0.1µF
VDD
A0
A1
VSS
S1A
S1B
3V
ENABLE
VS
DRIVE (VIN) 0V
VOUT
OUTPUT
EN
0V
VS
50â¦
D1
RL
VOUT
CL
GND
300â¦
35pF
50%
50%
90%
90%
tON (EN)
tOFF (EN)
Figure 19. Enable Delay, tON (EN), tOFF (EN)
Rev. B | Page 13 of 16
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