English
Language : 

ADG636YRU-REEL Datasheet, PDF (11/16 Pages) Analog Devices – 1 pC Charge Injection, 100 pA Leakage, CMOS, ±5 V/+5 V/+3 V Dual SPDT Switch
◁
ADG636
TYPICAL PERFORMANCE CHARACTERISTICS
250
TA = 25°C
VDD, VSS = ±3V
200
VDD, VSS = ±2.5V
150
VDD, VSS = ±3.3V
100
VDD, VSS = ±5V
50
VDD, VSS = ±4.5V
0
–5 –4 –3 –2 –1 0 1 2 3 4 5
VD, VS (V)
Figure 3. On Resistance vs. VD (VS), Dual Supply
350
VDD = 5V
VSS = 0V
300
250
200
TA = +125°C TA = +85°C
150
100
50
TA = +25°C
TA = –40°C
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VD, VS (V)
Figure 6. On Resistance vs. VD (VS) for Different Temperatures, Single Supply
600
TA = 25°C
VSS = 0V
500
VDD = 2.7V
400
VDD = 3V
300
200
100
VDD = 4.5V
VDD = 3.3V
VDD = 5V
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VD, VS (V)
Figure 4. On Resistance vs. VD (VS), Single Supply
5
3
ID (OFF)
1
–1
IS (OFF)
–3
–5
ID (ON), IS (ON)
–7
–9
–11
–13 VDD = +5V
VSS = –5V
–15
0
20
40
60
80
TEMPERATURE (°C)
100
120
Figure 7. Leakage Currents vs. Temperatures, Dual Supply
180
VDD = +5V
160 VSS = –5V
140
120
100
TA = +125°C
TA = +85°C
80
60
40
TA = +25°C
TA = –40°C
20
0
–5 –4 –3 –2 –1 0 1 2 3 4 5
VD, VS (V)
Figure 5. On Resistance vs. VD (VS) for Different Temperatures, Dual Supply
5
3
IS (OFF)
1
–1
–3
ID (OFF)
–5
ID (ON), IS (ON)
–7
–9
–11
–13 VDD = 5V
VSS = 0V
–15
0
20
40
60
80
TEMPERATURE (°C)
100
120
Figure 8. Leakage Currents vs. Temperature, Single Supply
Rev. B | Page 11 of 16
 ▷