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ADG636YRU-REEL Datasheet, PDF (12/16 Pages) Analog Devices – 1 pC Charge Injection, 100 pA Leakage, CMOS, ±5 V/+5 V/+3 V Dual SPDT Switch
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ADG636
1.0
TA = 25°C
0.5
0
VDD = +3V
VSS = 0V
–0.5
–1.0
–1.5
VDD = +5V
VSS = –5V
VDD = +5V
VSS = 0V
–2.0
–5 –4 –3 –2 –1 0 1 2 3 4 5
VS (V)
Figure 9. Charge Injection vs. Source Voltage
250
TA = 25 C
200
150
tON
100
VDD = +5V
VSS = –5V
tOFF
VDD = +5V
VSS = 0V
50
0
–40 –20
0
VDD = +5V
VSS = 0V
VDD = +5V
VSS = –5V
20
40
60
80 100 120
TEMPERATURE (°C)
Figure 10. tON/tOFF Enable Timing vs. Temperature
0
TA = 25 C
–10
–20
–30
VDD = +5V
VSS = 0V
–40
VDD = +5V
–50
VSS = –5V
–60
–70
–80
–90
0.3
1
10
100
FREQUENCY (MHz)
1000
Figure 11. Off Isolation vs. Frequency
0
TA = 25°C
–10
–20
VDD = +5V
–30
VSS = 0V
–40
–50
VDD = +5V
VSS = –5V
–60
–70
–80
–90
0.3
1
10
100
1000
FREQUENCY (MHz)
Figure 12. Crosstalk vs. Frequency
0
TA = 25 C
–2
–4
VDD = +5V
VSS = –5V
–6
–8
VDD = +5V
VSS = 0V
–10
–12
–14
–16
–18
0.3
1
10
100
FREQUENCY (MHz)
Figure 13. On Response vs. Frequency
1000
Rev. B | Page 12 of 16
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