ADG636YRU-REEL Datasheet, PDF (4/16 Pages) Analog Devices – 1 pC Charge Injection, 100 pA Leakage, CMOS, ±5 V/+5 V/+3 V Dual SPDT Switch

ADG636
Parameter
CS (Off )
CD (Off )
CD (On), CS (On)
POWER REQUIREMENTS
IDD
ISS
+25°C
5
8
8
−40°C to +85°C
0.001
0.001
1 _{Guaranteed by design; not subject to production test.}
−40°C to +125°C
1.0
1.0
Unit
pF typ
pF typ
pF typ
μA typ
μA max
μA typ
μA max
Test Conditions/Comments
f = 1 MHz
f = 1 MHz
f = 1 MHz
VDD = +5.5 V, VSS = −5.5 V
Digital inputs = 0 V or 5.5 V
Digital inputs = 0 V or 5.5 V
Digital inputs = 0 V or 5.5 V
Digital inputs = 0 V or 5.5 V
Rev. B | Page 4 of 16