PAC5250_17 Datasheet, PDF (48/70 Pages) Active-Semi, Inc – Power Application Controller

14. MEMORY SYSTEM
14.1. Features
 32kB embedded FLASH
 100,000 program/erase cycles
 10 years data retention
 8kB SRAM
14.2. Block Diagram
Figure 14-1. Memory System
INFO ROM
256B INFO
ROM
MEMORY SYSTEM
FLASH
1kB FLASH
PAGES
SRAM
8kB
SRAM
PAC5250
Power Application Controller
14.3. Functional Description
The device has multiple banks of embedded FLASH memory, SRAM memory, as well as peripheral control registers that
are all program-accessible in a flat memory map.
14.3.1. Program and Data FLASH
32kB in 32 pages of 1kB each is available for program or data memory. Each of them can be individually erased or written
to while the microcontroller is executing a program from SRAM.
14.3.2. SRAM
Up to 8kB contiguous array of SRAM is available for non-persistent data storage. The SRAM memory supports word
(4-byte), half-word (2-byte) and byte address aligned access. The microcontroller may execute code out of SRAM for time-
critical applications, or when modifying the contents of FLASH memory.
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Rev 1.7‒April 15, 2016