ACE25C200 Datasheet, PDF (17/32 Pages) ACE Technology Co., LTD. – 2MB Serial Flash Memory

ACE25C200
2MB Serial Flash Memory
Figure 13 Fast read dual I/O instruction (previous instruction set M5-4=10)
Page Program (02h)
The Page Program instruction allows from one byte to 256 bytes (a page) of data to be programmed
at previously erased (FFh) memory locations. A Write Enable instruction must be executed before the
device will accept the Page Program Instruction (Status Register bit WEL= 1). The instruction is
initiated by driving the CS# pin low then shifting the instruction code “02h” followed by a 24-bit
address A23-A0 and at least one data byte, into the DI pin. The CS# pin must be held low for the
entire length of the instruction while data is being sent to the device. The Page Program instruction
sequence is shown in Figure 14.
If an entire 256 byte page is to be programmed, the last address byte (the 8 least significant address
bits) should be set to 0. If the last address byte is not zero, and the number of clocks exceeds the
remaining page length, the addressing will wrap to the beginning of the page. In some cases, less
than 256 bytes (a partial page) can be programmed without having any effect on other bytes within the
same page. One condition to perform a partial page program is that the number of clocks can not
exceed the remaining page length. If more than 256 bytes are sent to the device the addressing will
wrap to the beginning of the page and overwrite previously sent data.
VER 1.2 17