W29EE512 Datasheet, PDF (9/22 Pages) Winbond – 64K X 8 CMOS FLASH MEMORY

W29EE512
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
Power Supply Voltage to Vss Potential
Operating Temperature
Storage Temperature
D.C. Voltage on Any Pin to Ground Potential except A9
Transient Voltage (¡ Õ 20 nS) on Any Pin to Ground Potential
Voltage on A9 and #OE Pin to Ground Potential
RATING
-0.5 to +7.0
0 to +70
-65 to +150
-0.5 to VCC +1.0
-1.0 to VCC +1.0
-0.5 to 12.5
UNIT
V
°C
°C
V
V
V
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability
of the device.
Operating Characteristics
(VCC = 5.0V ±10%, VSS = 0V, TA = 0 to 70° C)
PARAMETER
SYM.
TEST CONDITIONS
Power Supply
Current
Standby Vcc Current
(TTL Input)
Standby Vcc Current
(CMOS Input)
Input Leakage
Current
Output Leakage
Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Output High Voltage
CMOS
ICC #CE = #OE = VIL, #WE = VIH,
all I/Os open
Address inputs = VIL/VIH, at f = 5 MHz
ISB1 #CE = VIH, all I/Os open
Other inputs = VIL/VIH
ISB2 #CE = VCC -0.3V, all I/Os open
Other inputs = VCC -0.3V/GND
ILI VIN = GND to VCC
ILO VIN = GND to VCC
VIL
-
VIH
-
VOL IOL = 2.1 mA
VOH1 IOH = -0.4 mA
VOH2 IOH = -100 µA; VCC = 4.5V
LIMITS
UNIT
MIN. TYP. MAX.
-
-
50 mA
-
2
3 mA
-
20 100 µA
-
-
10 µA
-
-
10 µA
-
- 0.8 V
2.0
-
-
V
-
- 0.45 V
2.4
-
-
V
4.2
-
-
V
Publication Release Date: February 18, 2002
-9-
Revision A7