W29EE512 Datasheet, PDF (1/22 Pages) Winbond – 64K X 8 CMOS FLASH MEMORY

W29EE512
64K × 8 CMOS FLASH MEMORY
GENERAL DESCRIPTION
The W29EE512 is a 512K bit, 5-volt only CMOS flash memory organized as 64K × 8 bits. The device
can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not
required. The unique cell architecture of the W29EE512 results in fast program/erase operations with
extremely low current consumption (compared to other comparable 5-volt flash memory products). The
device can also be programmed and erased using standard EPROM programmers.
FEATURES
• Single 5-volt program and erase operations
• Fast page-write operations
− 128 bytes per page
− Page program cycle: 10 mS (max.)
− Effective byte-program cycle time: 39 µS
− Optional software-protected data write
• Fast chip-erase operation: 50 mS
• Read access time: 70/90/120 nS
• Typical page program/erase cycles: 1K/10K
• Ten-year data retention
• Software and hardware data protection
• Low power consumption
− Active current: 50 mA (max.)
− Standby current: 100 µA (max.)
• Automatic program timing with internal VPP
generation
• End of program detection
− Toggle bit
− Data polling
• Latched address and data
• TTL compatible I/O
• JEDEC standard byte-wide pinouts
• Available packages: 32-pin PLCC, TSOP and
VSOP
Publication Release Date: February 18, 2002
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Revision A7