W29EE512 Datasheet, PDF (10/22 Pages) Winbond – 64K X 8 CMOS FLASH MEMORY

W29EE512
Power-up Timing
PARAMETER
Power-up to Read Operation
Power-up to Write Operation
CAPACITANCE
(VCC = 5.0V, TA = 25° C, f = 1 MHz)
PARAMETER
I/O Pin Capacitance
Input Capacitance
SYMBOL
CI/O
CIN
SYMBOL
TPU.READ
TPU.WRITE
CONDITIONS
VI/O = 0V
VIN = 0V
TYPICAL
100
5
MAX.
12
6
AC CHARACTERISTICS
AC Test Conditions
PARAMETER
Input Pulse Levels
Input Rise/Fall Time
Input/Output Timing Level
Output Load
AC Test Load and Waveform
CONDITIONS
0V to 3V
< 5 nS
1.5V/1.5V
1 TTL Gate and CL = 100 pF/30 pF
+5V
UNIT
µS
mS
UNIT
pF
pF
D OUT
100 pF (For 90 nS/120 nS)
30 pF (For 70 nS)
1.8 Kohm
1.3 Kohm
Input
3V
1.5V
0V
Test Point
Output
1.5V
Test Point
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