W25Q16DW Datasheet, PDF (70/83 Pages) Winbond – 1.8V 16M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI

W25Q16DW
11.3 Power-up Timing and Write Inhibit Threshold
PARAMETER
SYMBOL
SPEC
MIN
VCC (min) to /CS Low
tVSL⁽¹⁾
10
Time Delay Before Write Instruction
tPUW⁽¹⁾
1
Write Inhibit Threshold Voltage
VWI⁽¹⁾
1.0
MAX
10
1.4
Note:
1. These parameters are characterized only.
UNIT
µs
ms
V
Figure 43. Power-up Timing and Voltage Levels
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