W989D6CB Datasheet, PDF (7/67 Pages) Winbond – 512Mb Mobile LPSDR

W989D6CB / W989D2CB
6. ELECTRICAL CHARACTERISTICS
6.1 Absolute Maximum Ratings
PARAMETER
Voltage on VDD relative to VSS
Voltage on VDDQ relative to VSS
Voltage on any pin relative to VSS
Operating Temperature
Storage Temperature
Short Circuit Output Current
Power Dissipation
512Mb Mobile LPSDR
SYMBOL
VDD
VDDQ
VIN, VOUT
Tc
TSTG
IOUT
PD
VALUES
MIN
MAX
−0.3
2.7
−0.3
2.7
−0.3
2.7
-25
85
-40
85
−55
150
±50
1.0
UNITS
V
V
V
°C
°C
mA
W
6.2 Operating Conditions
PARAMETER
Supply Voltage
Supply Voltage (for I/O Buffer)
Input High level Voltage
Input Low level Voltage
LVCOMS Output H Level Voltage (IOUT = -0.1 mA )
LVCMOS Output L Level Voltage (IOUT = +0.1 mA )
Input Leakage Current
(0V VIN VDD, all other pins not under test = 0V)
Output Leakage Current (Output disable , 0V VOUT
VDDQ)
SYMBOL
VDD
VDDQ
VIH
VIL
VOH
VOL
MIN.
1.7
1.7
0.8*VDDQ
-0.3
0.9*VDDQ
-
II(L)
-1
IO(L)
-5
TYP.
1.8
1.8
-
-
-
-
-
-
Note: VIH(max) = VDD/ VDDQ+1.2V for pulse width < 5 ns , VIL(min) = VSS/ VSSQ-1.2V for pulse width < 5 ns
MAX.
1.95
1.95
VDDQ+0.3
+0.3
-
0.2
UNIT
V
V
V
V
V
V
1
A
5
A
6.3 Capacitance
PARAMETER
Input Capacitance
(A[ n : 0] , BA0, BA1, CS , RAS , CAS , WE , DQM, CKE)
Input Capacitance (CLK)
Input/Output capacitance
Note: These parameters are periodically sampled and not 100% tested.
SYMBOL
CI
CCLK
CIO
MIN.
1.5
1.5
3.0
MAX.
3.0
3.5
5.0
UNIT
pf
pf
pf
Publication Release Date: Sep, 22, 2011
-7-
Revision A01-005