W24L11 Datasheet, PDF (7/11 Pages) Winbond – 128K X 8 High Speed CMOS Static RAM

Preliminary W24L11
DATA RETENTION CHARACTERISTICS
(TA (°C) = 0 to 70)
PARAMETER
SYM.
TEST CONDITIONS
MIN.
VDD for Data Retention
VDR _{CS1 ≥ VDD -0.2V or}
2.0
CS2 ≤ 0.2V
Data Retention Current
IDDDR _{CS1 ≥ VDD -0.2V or}
-
CS2 ≤ 0.2V, VDD = 3V
Chip Deselect to Data
Retention Time
TCDR See data retention waveform 0
Operation Recovery Time TR
TRC*
* Read Cycle Time
TYP.
-
-
-
-
MAX. UNIT
-
V
50 µA
-
nS
-
nS
DATA RETENTION WAVEFORM
VDD
CS1
CS2
0.9VDD
TCDR
VDR_=> 2V
CS1=> VDD - 0.2V
0.9 VDD
TR
0V ^<= CS2 ^<= 0.2V
Publication Release Date: October 1999
-7-
Revision A1