W24L11 Datasheet, PDF (4/11 Pages) Winbond – 128K X 8 High Speed CMOS Static RAM

Preliminary W24L11
AC Characteristics, continued
(VDD = 3.0V to 3.6 V; VSS = 0V; TA (°C) = 0 to 70)
Read Cycle
PARAMETER
SYMBOL
Read Cycle Time
Address Access Time
Chip Select Access Time
Output Enable to Output Valid
Chip Selection to Output in Low Z
Output Enable to Output in Low Z
Chip Deselection to Output in High Z
Output Disable to Output in High Z
Output Hold from Address Change
∗ These parameters are sampled but not 100% tested
Write Cycle
PARAMETER
TRC
TAA
TACS
TAOE
TCLZ*
TOLZ*
TCHZ*
TOHZ*
TOH
SYMBOL
Write Cycle Time
Chip Selection to End of Write
Address Valid to End of Write
Address Setup Time
Write Pulse Width
Write Recovery Time
CS1, CS2, WE
Data Valid to End of Write
Data Hold from End of Write
Write to Output in High Z
Output Disable to Output in High Z
Output Active from End of Write
∗ These parameters are sampled but not 100% tested
TWC
TCW
TAW
TAS
TWP
TWR
TDW
TDH
TWHZ*
TOHZ*
TOW
W24L11-70L/LL
MIN.
MAX.
70
-
-
70
-
70
-
35
10
-
5
-
-
30
-
30
10
-
UNIT
nS
nS
nS
nS
nS
nS
nS
nS
nS
W24L11-70L/LL
MIN.
MAX.
70
-
55
-
55
-
0
-
50
-
0
-
45
-
0
-
-
25
-
25
5
-
UNIT
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
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