W24L11 Datasheet, PDF (2/11 Pages) Winbond – 128K X 8 High Speed CMOS Static RAM

Preliminary W24L11
TRUTH TABLE
CS1 ^CS2 OE WE
H
X
X
X
X
L
X
X
L
H
H
H
L
H
L
H
L
H
X
L
MODE
Not Selected
Not Selected
Output Disable
Read
Write
I/O1−I/O8
High Z
High Z
High Z
Data Out
Data In
VDD CURRENT
ISB, ISB1
ISB, ISB1
IDD
IDD
IDD
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
RATING
UNIT
Supply Voltage to VSS Potential
-0.5 to +4.6
V
Input/Output to VSS Potential
-0.5 to VDD +0.5
V
Allowable Power Dissipation
1.0
W
Storage Temperature
-65 to +150
°C
Operating Temperature
0 to 70
°C
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the
device.
Operating Characteristics
(VDD = 3.0V to 3.6V; VSS = 0V; TA (°C) = 0 to 70)
PARAMETER
SYM.
Input Low Voltage
VIL
Input High Voltage
VIH
Input Leakage Current
ILI
Output Leakage Current
ILO
Output Low Voltage
VOL
Output High Voltage
VOH
Operating Power Supply
IDD
Current
TEST CONDITIONS
-
-
VIN = VSS to VDD
VI/O = VSS to VDD,
CS1 = VIH (min.) or
CS2 = VIL (max.) or
OE = VIH (min.) or
WE = VIL (max.)
IOL = +2.1 mA
IOH = -1.0 mA
CS1 = VIL (max.) and
CS2 = VIH (min.), I/O = 0 mA,
Cycle = min. Duty = 100%
MIN.
-0.5
+2.0
-1
-1
MAX.
+0.6
VDD +0.5
+1
+1
UNIT
V
V
µA
µA
-
0.4
V
2.2
-
V
-
40
mA
-2-