W2465 Datasheet, PDF (7/10 Pages) Winbond – 8K X 8 CMOS STATIC RAM

W2465
DATA RETENTION CHARACTERISTICS
(TA = 0 to 70° C)
PARAMETER
SYM.
TEST CONDITIONS
VDD for Data Retention
VDR _{CS1 ≥ VDD -0.2V, or}
CS2 ≤ 0.2V
Data Retention Current
IDDDR _{CS1 ≥ VDD -0.2V, or} LL
CS2 ≤ 0.2V
VDD = 3V
L
Chip Deselect to Data
Retention Time
TCDR See data retention
waveforms
Operation Recovery Time TR
TRC^* = Read Cycle Time
DATA RETENTION WAVEFORMS
MIN. TYP. MAX. UNIT
2.0
-
-
V
-
-
10
µA
-
-
20
µA
0
-
-
nS
TRC* -
-
nS
VDD
CS1
CS2
DATA RETENTION MODE
4.5V
TCDR
VIH
VDR >= 2V
CS1 ^{>= V}DD - 0.2V
4.5V
TR
VIH
VIL
CS2 ^<= 0.2V
VIL
ORDERING INFORMATION
PART NO.
W2465-70LL
W2465-10L
W2465S-70LL
W2465S-10L
W2465K-70LL
W2465K-10L
ACCESS TIME
(nS)
70
100
70
100
70
100
OPERATING
CURRENT
MAX. (mA)
70
60
70
60
70
60
STANDBY
CURRENT
MAX. (µA)
20
50
20
50
20
50
PACKAGE
600 mil DIP
600 mil DIP
330 mil SOP
330 mil SOP
300 mil Skinny
300 mil Skinny
Notes:
1. Winbond reserves the right to make changes to its products without prior notice.
2. Purchasers are responsible for performing appropriate quality assurance testing on products intended for use in applications
where personal injury might occur as a consequence of product failure.
Publication Release Date: April 1997
-7-
Revision A8