W2465 Datasheet, PDF (2/10 Pages) Winbond – 8K X 8 CMOS STATIC RAM

W2465
TRUTH TABLE
CS1
CS2
OE
WE
MODE
I/O1−I/O8
VDD CURRENT
H
X
X
X Not Selected
High Z
ISB, ISB1
X
L
X
X Not Selected
High Z
ISB, ISB1
L
H
H
H Output Disable
High Z
IDD
L
H
L
H Read
Data Out IDD
L
H
X
L Write
Data In
IDD
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
RATING
UNIT
Supply Voltage to VSS Potential
-0.5 to +7.0
V
Input/Output to VSS Potential
-0.5 to VDD +0.5
V
Allowable Power Dissipation
1.0
W
Storage Temperature
-65 to +150
°C
Operating Temperature
0 to +70
°C
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the
device.
Operating Characteristics
(VDD = 5V ±10%, VSS = 0V, TA = 0 to 70° C)
PARAMETER
Input Low Voltage
Input High Voltage
SYM.
VIL
VIH
TEST CONDITIONS
-
-
Input Leakage Current ILI
VIN = VSS to VDD
Output Leakage
ILO
Current
Output Low Voltage
VOL
Output High Voltage
VOH
Operating Power
IDD
Supply Current
Standby Power Supply ISB
Current
ISB1
VI/O = VSS to VDD
CS1 = VIH (min.) or CS2
= VIL (max.) or OE = VIH
(min.) or WE = VIL (max.)
IOL = +4.0 mA
IOH = -1.0 mA
CS1 = VIL (max.), ⁷⁰
CS2 = VIH (min.)
I/O = 0 mA,
100
Cycle = min.
Duty = 100%
CS1 _{= VIH (min.) or CS2}
= VIL (max.), Cycle = min.
Duty = 100%
CS1 _≥ VDD -0.2V
LL
or CS2 ≤ 0.2V
L
Note: Typical characteristics are at VDD = 5 V, TA = 25° C.
MIN.
-0.5
+2.2
-2
-2
-
2.4
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
MAX.
+0.8
VDD +0.5
+2
+2
0.4
-
70
60
3
20
50
UNIT
V
V
µA
µA
V
V
mA
mA
mA
µA
µA
-2-