W25Q80DVSNIG-TR Datasheet, PDF (57/71 Pages) Winbond – 3V 8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI

W25Q80DV
9.4 DC Electrical Characteristics
PARAMETER
SYMBOL CONDITIONS
SPEC
MIN
TYP
MAX
Input Capacitance
CIN⁽¹⁾
VIN = 0V
6
Output Capacitance
Cout⁽¹⁾ VOUT = 0V
8
Input Leakage
ILI
±2
I/O Leakage
ILO
±2
Standby Current
Icc1
/CS = VCC,
VIN = GND or VCC
10
50
Power-down Current
Icc2
/CS = VCC,
VIN = GND or VCC
1
5
Current Read Data /
50MHz
Icc3⁽²⁾
C = 0.1 VCC / 0.9 VCC
DO = Open
7
15
Current Dual Output /
Quad Output Read
80MHz
Icc3⁽²⁾
C = 0.1 VCC / 0.9 VCC
DO = Open
10
20
Current Quad Output
Read 104MHz
Icc3⁽²⁾
C = 0.1 VCC / 0.9 VCC
DO = Open
12
25
Current Write Status
Register
Icc4 /CS = VCC
20
25
Current Page Program
Icc5 /CS = VCC
20
25
Current Sector/Block
Erase
Icc6 /CS = VCC
20
25
Current Chip Erase
Icc7 /CS = VCC
20
25
Input Low Voltage
Vil
-0.5
VCC x 0.3
Input High Voltage
Vih
VCC x 0.7
Output Low Voltage
Vol
Iol = 100 µA
0.2
Output High Voltage
Voh Ioh = –100 µA
VCC – 0.2
Notes:
1. Tested on sample basis and specified through design and characterization data. TA = 25° C, VCC = 3V.
2. Checker Board Pattern.
UNIT
pF
pF
µA
µA
µA
µA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
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Publication Release Date:July 21, 2015
Prelimry-Revision G