W25Q80DVSNIG-TR Datasheet, PDF (56/71 Pages) Winbond – 3V 8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI

W25Q80DV
9.3 Power-up Timing and Write Inhibit Threshold⁽¹⁾
Parameter
VCC (min) to /CS Low
Time Delay Before Write Instruction
Write Inhibit Threshold Voltage
Symbol
tVSL
tPUW
VWI
spec
Unit
MIN
MAX
10
µs
5
ms
1
2
V
Note:
1. These parameters are characterized only.
Figure 40a. Power-up Timing and Voltage Levels
Figure 40b. Power-up, Power-Down Requirement
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Publication Release Date:July 21, 2015
Prelimry-Revision G