W25Q80 Datasheet, PDF (51/61 Pages) Winbond – 8M-BIT, 16M-BIT AND 32M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI

W25Q80, W25Q16, W25Q32
11.8 AC Electrical Characteristics (cont’d)
DESCRIPTION
/HOLD Active Hold Time relative to CLK
/HOLD Not Active Setup Time relative to CLK
/HOLD Not Active Hold Time relative to CLK
/HOLD to Output Low-Z
/HOLD to Output High-Z
Write Protect Setup Time Before /CS Low
Write Protect Hold Time After /CS High
/CS High to Power-down Mode
/CS High to Standby Mode without Electronic
Signature Read
/CS High to Standby Mode with Electronic
Signature Read
/CS High to next Instruction after Suspend
Write Status Register Time
Byte Program Time (First Byte) ⁽⁵⁾
Additional Byte Program Time (After First Byte)
(5)
SYMBOL
tCHHH
tHHCH
tCHHL
tHHQX⁽²⁾
tHLQZ⁽²⁾
tWHSL⁽³⁾
tSHWL⁽³⁾
tDP⁽²⁾
tRES1⁽²⁾
ALT
tLZ
tHZ
MIN
5
5
5
20
100
tRES2⁽²⁾
tSUS⁽²⁾
tW
t_BP1
t_BP2
SPEC
TYP
MAX
7
12
3
3
1.8
20
10
15
30
50
6
12
UNIT
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
µs
ms
µs
µs
Page Program Time
tPP
1.5
3
ms
Sector Erase Time (4KB)
tSE
120
200
ms
Block Erase Time (32KB)
Block Erase Time (64KB)
Chip Erase Time W25Q80
Chip Erase Time W25Q16
Chip Erase Time W25Q32
tBE₁
0.5
1
s
tBE₂
0.75
1.5
s
tCE
12
25
s
25
40
s
50
80
s
Notes:
1.
2.
3.
4.
5.
Clock high + Clock low must be less than or equal to 1/fC.
Value guaranteed by design and/or characterization, not 100% tested in production.
Only applicable as a constraint for a Write Status Register instruction when Sector Protect Bit is set to 1.
Commercial temperature only applies to Fast Read (F_R0 & F_R1). Industrial temperature applies to all other parameters.
For multiple bytes after first byte within a page, t_BPN = t_{BP1 +} t_{BP2 * N} (typical) and t_BPN = t_{BP1 +} t_{BP2 * N} (max), where N =
number of bytes programmed.
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Publication Release Date: September 26, 2007
Preliminary - Revision B